Etching of cubic GaN by annealing in hydrogen ambient
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 730-733
- https://doi.org/10.1016/s0022-0248(98)00274-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Growth of zinc- blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a Low V/lll molar ratioJournal of Electronic Materials, 1997
- On the thermal decomposition of GaN in vacuumPhysica Status Solidi (a), 1974
- Few Characteristics of Epitaxial GaN—Etching and Thermal DecompositionJournal of the Electrochemical Society, 1974