Landau levels of the two-dimensional holes gas in GaAs with inclusion of the anisotropy of the band structure
- 3 April 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 170 (1-2), 593-600
- https://doi.org/10.1016/0039-6028(86)91025-3
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctionsSuperlattices and Microstructures, 1985
- Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum WellsJournal of the Physics Society Japan, 1985
- Effective masses of holes at GaAs-AlGaAs heterojunctionsPhysical Review B, 1985
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Quantum resonances in the valence bands of zinc-blende semiconductors. I. Theoretical aspectsPhysical Review B, 1979