Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98 μm) laser diodes

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29 April 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (18), 2467-2468
https://doi.org/10.1063/1.115822

Abstract

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Cited by 22 articles