Negative resistance and switching effect in the single crystal layer compounds SnS2 and ZrS2
- 15 September 1969
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 7 (18), 1359-1361
- https://doi.org/10.1016/0038-1098(69)90371-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Conduction and switching in non-crystalline materialsContemporary Physics, 1969
- On the Transfer Nature of Charge Carriers in InSePhysica Status Solidi (b), 1969
- Reversible Electrical Switching Phenomena in Disordered StructuresPhysical Review Letters, 1968
- Mobility of Charge Carriers in Semiconducting Layer StructuresPhysical Review B, 1967
- New conduction and reversible memory phenomena in thin insulating filmsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- SWITCHING AND LOW-FIELD BREAKDOWN IN n-GaAs BULK DIODESApplied Physics Letters, 1966
- Volume-controlled current injection in insulatorsReports on Progress in Physics, 1964
- Low-Frequency Negative Resistance in Thin Anodic Oxide FilmsJournal of Applied Physics, 1962
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961