Reaction mechanisms of the radio frequency glow discharged deposition process in silane-helium
- 1 June 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 60 (2), 147-155
- https://doi.org/10.1016/0040-6090(79)90185-8
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Plasma preparations of amorphous silicon filmsThin Solid Films, 1978
- Hydrogen bonding in silicon-hydrogen alloysPhilosophical Magazine Part B, 1978
- A kinetic model for radio frequency plasma-activated chemical vapour depositionThin Solid Films, 1978
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Doped amorphous semiconductorsAdvances in Physics, 1977
- Dissociation of methane by electron impactThe Journal of Chemical Physics, 1975
- Kinetics of Decomposition of Silane (Diluted in Argon) in a Low Pressure Glow DischargeJournal of the Electrochemical Society, 1975
- Mass-spectrometric ion sampling from reactive plasmas I. Apparatus for argon and reactive dischargesInternational Journal of Mass Spectrometry and Ion Physics, 1973