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Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s
Home
Publications
Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s
Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s
KG
K. M. Geib
K. M. Geib
SG
S. M. Goodnick
S. M. Goodnick
DL
D. Y. Lin
D. Y. Lin
RG
R. G. Gann
R. G. Gann
CW
C. W. Wilmsen
C. W. Wilmsen
JW
J. F. Wager
J. F. Wager
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1 July 1984
journal article
Published by
American Vacuum Society
in
Journal of Vacuum Science & Technology B
Vol. 2
(3)
,
516-521
https://doi.org/10.1116/1.582810
Abstract
No abstract available
Cited by 17 articles