Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y
- 18 April 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (17), 173501
- https://doi.org/10.1063/1.1906326
Abstract
An approach for the passivation of photodiodes based on compounds of the InAs ∕ GaSb ∕ AlSb materials family is presented. The passivation is realized by the overgrowth of patterned mesa devices with a quaternary Al x Ga 1 − x As y Sb 1 − y layer, lattice matched to the GaSb substrate. Proof of concept is demonstrated on infrared photodiodes based on InAs ∕ ( GaIn ) Sb superlattices with 10 μ m cutoff wavelength operating at 77 K where suppression of surfaceleakage currents is observed.Keywords
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