Optimization of graded band gap CdHgTe solar cells
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (3), 145-154
- https://doi.org/10.1051/rphysap:01978001303014500
Abstract
A p-n junction is considered with a p-type graded band gap CdHgTe alloy as the front layer and an n-type CdHgTe alloy of uniform band gap as the base region. The optimization of solar energy conversion is conducted with respect to two constitutive parameters : the gradient of the band gap and the thickness of the front layer. The presence of an accelerating quasi-electric field near the surface makes the grade structure less sensitive to recombination effects than a CdTe homojunction. Depending on the bulk lifetime (10-9 s - 5 x 10- 10 s) and the surface recombination velocity (105 cm/s -106 cm/s) an AMI power efficiency between 17.90 an 19.75 % is predictedKeywords
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