InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Abstract

InGaN multi-quantum-well-structure laser diodes with ${\mathrm{Al}}_{\mathrm{0.14}}{\mathrm{Ga}}_{\mathrm{0.86}}\mathrm{N/GaN}$ modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation. After 4 μm etching of the ELOG substrate, the etch pit density was about ${\text{2×10}}^8$ ${\mathrm{cm}}^{\mathrm{2}}$ in the region of the 4-μm-wide stripe window, but almost zero in the region of the 7-μm-wide ${\mathrm{SiO}}_{\mathrm{2}}$ stripe.