Plasma-assisted InP-to-Si low temperature wafer bonding
Top Cited Papers
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 8 (1), 118-131
- https://doi.org/10.1109/2944.991407
Abstract
The applicability of wafer bonding as a tool to integrate the dissimilar material system InP-to-Si is presented and discussed with recent examples of InP-based optoelectronic devices on Si. From there, the lowering of annealing temperature in wafer bonding by plasma-assisted bonding is the essence of this review paper. Lower annealing temperatures would further launch wafer bonding as a competitive technology and enable a wider use of it. Oxygen plasma treatment has been proven to be very feasible in achieving a strong bonding already at low temperatures. It was also seen that in our experimental setups the results depended on what plasma parameters that were used, since different plasma parameters create different surface conditions.Keywords
This publication has 77 references indexed in Scilit:
- Surface stress in thin oxide layer made by plasma oxidation with applying positive biasApplied Surface Science, 2000
- Mechanically induced Si layer transfer in hydrogen-implanted Si wafersApplied Physics Letters, 2000
- Time-Dependent Surface Properties and Wafer Bonding of O[sub 2]-Plasma-Treated Silicon (100) SurfacesJournal of the Electrochemical Society, 2000
- Formation of Silicon Structures by Plasma-Activated Wafer BondingJournal of the Electrochemical Society, 2000
- The effect of surface roughness on direct wafer bondingJournal of Applied Physics, 1999
- Growth of ultrathin SiO2 on Si by surface irradiation with an O2+Ar electron cyclotron resonance microwave plasma at low temperaturesJournal of Applied Physics, 1999
- Oxidation rate and surface-potential variations of silicon during plasma oxidationPhysical Review B, 1996
- Chemical Free Room Temperature Wafer To Wafer Direct BondingJournal of the Electrochemical Society, 1995
- Void-free silicon-wafer-bond strengthening in the 200–400 °C rangeSensors and Actuators A: Physical, 1993
- Boron contamination and antimony segregation at the interface of directly bonded silicon wafersJournal of Applied Physics, 1990