A method is reviewed for observing insulating samples in the scanning electron microscope without excessive specimen charging. In this way antiparallel domains may be directly observed without modification of the sample. The scanning electron microscope operating in the back-scattered electron mode reveals topography, and operation in the secondary electron mode at low voltage reveals surface potential variation. We have observed antiparallel domains on T.G.S., these domains disappear above the Curie point. The same method applied to BaTiO3 crystals reveals a ferroelectric surface layer, which has a domain structure different from the bulk and persists above the Curie point. KD2P and conducting WO3 crystals have also been studied.