Progress in the fabrication of monolithic matrix-addressed arrays of light-emitting diodes (LED's) in GaP using selective liquid-phase epitaxy is reviewed. The structures of two red arrays and one green array are discussed in detail. Photographs of the arrays are shown to demonstrate their capability as alphanumeric displays which may be easily interfaced with silicon integrated circuits. The use of selective liquid-phase epitaxy (LPE) to make flip-chip bonded displays is also discussed.