Frequency-dependent transients in GaAs MESFETs: process, geometry and material effects
- 13 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 33, 211-214
- https://doi.org/10.1109/gaas.1989.69328
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Analytical model of GaAs MESFET output conductancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC'sIEEE Transactions on Electron Devices, 1988
- GaAs MESFET interface considerationsIEEE Transactions on Electron Devices, 1987
- Supression of drain conductance transients, drain current oscillations, and low-frequency generation—Recombination noise in GaAs FET's using buried channelsIEEE Transactions on Electron Devices, 1986