Nonthermalized distribution of electrons on picosecond time scale in GaAs
- 17 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (7), 990-993
- https://doi.org/10.1103/physrevlett.68.990
Abstract
We have observed the thermalization of conduction electrons in GaAs from a Gaussian to a Maxwell-Boltzmann distribution, by time-resolved observation of the band-to-acceptor luminescence folllowing a short (5 ps) near-resonant laser pulse of very low excitation power. At electron density less than / the thermalization of the electron density distribution occurs on a time scale of 50 ps with a rate independent of density. At higher density, thermalization occurs via electron-electron scattering with a total cross section of approximately 6× .
Keywords
This publication has 14 references indexed in Scilit:
- Carrier thermalization inO: Phonon emission by excitonsPhysical Review B, 1991
- Subpicosecond kinetics of band-edge absorption inAsPhysical Review B, 1991
- Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopyPhysical Review Letters, 1991
- Long mean free path of hot electrons selectively injected to higher subbandsPhysical Review Letters, 1990
- Observation of hot-electron energy loss through the emission of phonon-plasmon coupled modes in GaAsPhysical Review Letters, 1990
- Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley ScatteringPhysical Review Letters, 1989
- Femtosecond Carrier Thermalization in Dense Fermi SeasPhysical Review Letters, 1988
- Band-structure determination of GaAs from hot-electron luminescencePhysical Review B, 1986
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963