Photoluminescence in VAD SiO2:GeO2 Glasses Sintered under Reducing or Oxidizing Conditions
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4R), 622
- https://doi.org/10.1143/jjap.28.622
Abstract
The atmosphere dependence of photoluminescence (PL) centers produced in SiO2:GeO2 glasses was examined by preparing VAD SiO2:GeO2 preform rods with changing the sintering atmosphere systematically from reducing to oxidizing. Four types of luminescence centers could be detected for samples sintered under H2/He=1/20, He or O2/He=1/10 atmospheres. The atmosphere dependence of luminescence intensity suggests that reduced species of Ge and/or Si are responsible for the luminescence centers. Ge(II) dissolved in a SiO2 network, which was characterized as a lone pair of electrons located on a Ge atom with 2 or 3 oxygen neighbors. Si(II) dissolved in a silica network, and the Si and/or Ge cluster and [chemical formula] or [chemical formula] were proposed for the possible structural models of PL centers.Keywords
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