Abstract
Strains in thin epitaxially grown films resulting mainly from the difference in the coefficients of thermal expansion between film and substrate have been measured using an x‐ray double‐crystal diffractometer. The measured strains are in agreement with those predicted from known thermal expansion data. Tensile stresses of about 6.5×109 dyn/cm2 parallel to the surface have been found at room temperature in a film deposited at 1225°C.