Optical properties of anodic oxide films on GaAs by ellipsometry
- 1 May 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 50, L17-L20
- https://doi.org/10.1016/0040-6090(78)90130-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The Analysis of Anodic Oxide Films on GaAs and GaP by Means of Radioactive Tracer TechniquesJournal of the Electrochemical Society, 1977
- On the Mechanism of GaAs AnodizationJournal of the Electrochemical Society, 1977
- Anodic oxidation of gallium arsenideThin Solid Films, 1976
- Gallium Arsenide Surface Film Evaluation by Ellipsometry Its Effect on Schottky BarriersJournal of the Electrochemical Society, 1973
- Optical properties of amorphous III–V compounds. I. ExperimentPhysica Status Solidi (b), 1972
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962