IR absorption in glow-discharge-deposited a−Si:(D,O) and a−Si:(D,N) alloy films

Abstract

This report is a continuation of our studies of the local chemical bonding in glow-discharge-deposited (GD) ternary amorphous silicon ($a-\mathrm{S}\mathrm{i}$) alloys using IR-absorption spectroscopy. The spectra we obtain for high-temperature $(T_s={300-400}^{\circ }\mathrm{C}) a-\mathrm{S}\mathrm{i}:(\mathrm{D},\mathrm{O})$ and $a-\mathrm{S}\mathrm{i}:(\mathrm{D},\mathrm{N})$ alloys confirm the bonding models previously presented by us on the basis of studies of similar hydrogenated alloys. Studies of low-temperature films $T_s<{150}^{\circ }\mathrm{C}$) support and extend the previously proposed model for $a-\mathrm{S}\mathrm{i}:(\mathrm{H},\mathrm{O})$ films, but lead to an important modification of the bonding picture for $a-\mathrm{S}\mathrm{i}:(\mathrm{H},\mathrm{N})$ alloys.