Potential imaging of operating light-emitting devices using Kelvin force microscopy
- 17 May 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (20), 2972-2974
- https://doi.org/10.1063/1.123983
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Two-dimensional potential profile measurement of GaAs HEMT's by Kelvin probe force microscopyIEEE Electron Device Letters, 1997
- Nanometer-scale imaging of potential profiles in optically excited n-i-p-i heterostructure using Kelvin probe force microscopyApplied Physics Letters, 1995
- InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V-grooved InP substrates with (111)A facet sidewallsApplied Physics Letters, 1995
- Silicon pn junction imaging and characterizations using sensitivity enhanced Kelvin probe force microscopyApplied Physics Letters, 1995
- Quantitative surface photovoltage spectroscopy of semiconductor interfacesJournal of Electronic Materials, 1995
- Kelvin probe force microscopyApplied Physics Letters, 1991
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987