Conductance associated with interface states in MOS tunnel structures
- 30 September 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (9), 993-998
- https://doi.org/10.1016/0038-1101(72)90141-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Studies of tunnel MOS diodes II. Thermal equilibrium considerationsJournal of Physics D: Applied Physics, 1971
- METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURESApplied Physics Letters, 1971
- Theory of tunneling into interface statesSolid-State Electronics, 1970
- Tunneling in MIS structures—II: Experimental results on MSiO2SiSolid-State Electronics, 1967
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962