Low-temperature annealed contacts to very thin GaAs epilayers
- 14 April 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (15), 986-988
- https://doi.org/10.1063/1.96632
Abstract
A low-temperature annealing process has been developed for the fabrication of low resistivity ohmic contacts to very thin (<0.2 μm) n+ GaAs epilayers. It is shown that by altering the relative amounts of Ni in the commonly used AuGe/Ni/Au contact system, the anneal temperature can be reduced from the standard 420–450 °C to 320 °C or less without deterioration in specific contact resistance. The specific contact resistances were evaluated using the modified transmission line model.Keywords
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