GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4), 39-42
- https://doi.org/10.1016/0022-0248(91)90943-y
Abstract
No abstract availableKeywords
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