New EPR data for chromium in electron-irradiated p-type GaAs: the observation of Cr complexes

Abstract
Gallium arsenide doubly doped with zinc and chromium has been subjected to 2 MeV electron irradiation in stages at room temperatures and examined by the EPR technique after each stage. When the free carrier absorption is first eliminated a signal attributed to Crs4+ is observed, but with further dose, spectra due to Cr in lower symmetries are observed. A predominant centre has C3v symmetry and is tentatively ascribed to (Crs4+-Gai) nearest-neighbour pairs. The pairing results from the displacement and subsequent motion of intrinsic defects introduced by the irradiation.