rf burnout in X-band Schottky mixers
- 1 November 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (11), 4826-4827
- https://doi.org/10.1063/1.1661027
Abstract
The burnout energy for metal-silicon Schottky-barrier mixers using various metals was measured using calibrated TR cells. The burnout energy was highest with Pd–Si and Pt–Si diodes (0.3 erg/spike). Possible burnout mechanisms are briefly discussed.Keywords
This publication has 2 references indexed in Scilit:
- Proton and sodium transport in SiO2filmsIEEE Transactions on Electron Devices, 1967
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963