Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator
- 15 January 1998
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 92 (1), 47-52
- https://doi.org/10.1016/s0379-6779(98)80021-0
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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