Silicon epitaxy by pulsed laser annealing of evaporated amorphous films
- 1 May 1978
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 66 (2), 145-146
- https://doi.org/10.1016/0375-9601(78)90021-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Silicon epitaxy by solid-phase crystallization of deposited amorphous filmsApplied Physics Letters, 1977
- Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layersJournal of Applied Physics, 1977
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Silicon surface studies by means of proton backscattering and proton induced X-Ray emissionRadiation Effects, 1973