Pathway to Depositing Device‐Quality 50°C Silicon Nitride in a High‐Density Plasma System

Abstract

A process for depositing 50°C silicon nitride films has been developed in a high‐density (electron cyclotron resonance) plasma system. While conventional 250°C deposited nitrides have Si‒H/N‒H bond ratios <1.0, the silane flow rates explored in this process are shown to result in Si‒H/N‒H bond ratios ≥1.0 and to have little effect on electrical properties in this range. Current densities of the resulting films are below for electric fields below 2 MV/cm. Breakdown voltage, defined by , is greater than 6 MV/cm. © 1999 The Electrochemical Society. All rights reserved.