1.5 μm GaInAsP/InP buried heterostructure lasers fabricated by hybrid combination of liquid- and vapour-phase epitaxy

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Abstract
1.5 μm GaInAsP/InP buried heteostructure lasers been successfully fabricated by using a hybrid combination of liquid- (LPE) and vapour-phase epitaxy (VPE). Current confinement is achieved by the overgrown VPE high resistivity InP layer (electron concentration of less than 1015cm−3). A threshold current of about 85 mA is obtained for a cavity length of about 200 μm and an active layer width of 4 μm.