Lateral composition modulation in InGaAsP deposited by gas source molecular beam epitaxy on (100)- and (h11)-oriented InP substrates
- 1 December 1995
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 90 (4), 437-445
- https://doi.org/10.1016/0169-4332(95)00176-x
Abstract
No abstract availableKeywords
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