Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide
- 1 May 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (9), 4825-4827
- https://doi.org/10.1063/1.359407
Abstract
Improvements in optical and electrical properties were observed after rutheniumpassivation of gallium antimonidesurfaces. On passivation,luminescence efficiency increased up to 50 times and surface state density reduced by two orders of magnitude. Also, the reverse leakage current was found to decrease by a factor of 30–40 times. Increase in carrier mobility as a result of grain boundarypassivation in polycrystalline GaSb was observed.Keywords
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