High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
- 1 January 1970
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 117 (3), 363
- https://doi.org/10.1149/1.2407512