ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION
- 1 April 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (7), 223-225
- https://doi.org/10.1063/1.1652788
Abstract
Optical reflectionspectra of crystalline, sputtered, and ion implantedsilicon specimens are presented. Characteristic aspects of the spectra of ion implanted specimens are related to lattice damage.Keywords
This publication has 4 references indexed in Scilit:
- The influence of temperature and channeling on ion-bombardment damage in SiCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTSCanadian Journal of Physics, 1967
- Ion-implantation doping of semiconductorsJournal of Materials Science, 1967
- The formation of channelling patterns on the surface of ion bombarded siliconPhysics Letters, 1966