Photoluminescence and excitation-photoluminescence study of spontaneous ordering inGaInP2

Abstract

Low-temperature polarized photoluminescence and polarized photoluminescence-excitation spectroscopies are used to probe the electronic structure of ${\mathrm{GaInP}}_2$ epilayers grown by organometallic vapor-phase epitaxy. The epilayers were grown at various sample temperatures and exhibit different degrees of ordering. A systematic study of the absorption edge and luminescence line shapes provides evidence for a distribution of order parameters, η, within the more ordered samples of this study.