XXVIII. Elastoresistance and Magnetoresistance in Multivalley Semi-conductors with an Axis of Symmetry
- 1 November 1956
- journal article
- research article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 2 (3), 279-292
- https://doi.org/10.1080/00207215608937032
Abstract
A multivalley model of the energy bands of a crystal with an axis of 3. 4 or 6 fold symmetry is described. The anisotropy in the properties of a single valley is expressed in terms of two second rank tensors : α, the effective mass tensor, and β, a tensor which relates the energy of an electronic state to the elastic strain. Expressions for the fourth rank magnetoresistance and elastoresistance tensors in terms of α and β are derived. The application of the results to crystals with additional symmetry elements is explained.Keywords
This publication has 15 references indexed in Scilit:
- Weak Field Magnetoresistance of-Type GermaniumPhysical Review B, 1956
- Analysis of Cyclotron Absorption in BismuthPhysical Review B, 1956
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956
- Deformation Potential Theory for-Type GePhysical Review B, 1956
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Magneto-resistance effect and the band structure of single crystal siliconPhysica, 1954
- Theory of the Galvanomagnetic Effects in GermaniumPhysical Review B, 1954
- Calculation of the Energy Band Structures of the Diamond and Germanium Crystals by the Method of Orthogonalized Plane WavesPhysical Review B, 1954
- The Magneto-Resistance Effect in Oriented Single Crystals of GermaniumPhysical Review B, 1951