Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+

Abstract

The ⁶⁹GaP⁺ and ⁷¹GaP⁺ molecular ions have been generated by the combined methods of photoionization/laser vaporization for trapping in neon matrices at 4 K for electron spin resonance (ESR) investigation. The ground electronic state of GaP⁺ has been determined as X ⁴∑ and its electronic structure based on nuclear hyperfine properties is compared with the isovalent ion, GaAs⁺. The magnetic parameters (MHz) for Ga³¹P⁺ are: g_⊥ =1.9836(5); A_⊥ (⁶⁹Ga)=188.6(1); A_⊥ (⁷¹Ga)=239.4(1); A_∥ (⁶⁹Ga)=260(30); A_∥ (⁷¹Ga)=300(10); A_⊥ (³¹P)=108.0(1); and A_∥ (³¹P)≊200(150). The g and A values observed for ³¹P(⁴S_1/2) atoms in these neon matrices show closer agreement with the gas phase parameters compared to previous values reported for the heavier rare gases.