Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated optics
- 1 October 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 18 (10), 1679-1688
- https://doi.org/10.1109/jqe.1982.1071404
Abstract
No abstract availableThis publication has 34 references indexed in Scilit:
- Etch rates for two material selective etches in the InGaAsP/InP systemJournal of Applied Physics, 1982
- Novel deposit/spin waveguide interconnection (DSWI) technique for semiconductor integrated opticsElectronics Letters, 1982
- High-T0 low-threshold crescent InGaAsP mesa-substrate buried-heterojunction lasersElectronics Letters, 1982
- Experimental 1.51 μm monomode fibre link containing an injection locked repeaterElectronics Letters, 1982
- Constricted double-heterojunction AlGaAs diode lasers: Structures and electrooptical characteristicsIEEE Journal of Quantum Electronics, 1981
- InGaAsP/InP buried-heterostructure lasers (λ = 1.5 μm) with chemically etched mirrorsJournal of Applied Physics, 1981
- Single-mode semiconductor injection lasers for optical fiber communicationsIEEE Journal of Quantum Electronics, 1981
- Low threshold InGaAsP/InP buried crescent laser with double current confinement structureIEEE Journal of Quantum Electronics, 1981
- External optical feedback effects on semiconductor injection laser propertiesIEEE Journal of Quantum Electronics, 1980
- GaAs integrated optical circuits by wet chemical etchingIEEE Journal of Quantum Electronics, 1979