Integrated waveguide p-i-n photodetector by MOVPE regrowth

Abstract

An InGaAs p-i-n photodetector for detection in the 1.0-1.6 µm wavelength range has been integrated at the end of a ridge waveguide in InP using a metal organic vapor phase epitaxial (MOVPE) regrowth technique. The waveguides had an average propagation loss of 3 dB/cm and 95 percent of the guided light was coupled into the photodetector. The photodetector had a 3-dB bandwidth of 1.5 GHz with a pulse response (full width at half maximum) of 80 ps at 1.3-µm wavelength. This is the first demonstration of an efficient, compact, and high-speed monolithic integrated waveguide-photodetector in the InGaAs/InP material system using epitaxial regrowth.