Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
- 30 April 2002
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 41 (Part 1, No), 2639-2644
- https://doi.org/10.1143/jjap.41.2639