Computer calculations of avalanche-induced relaxation oscillations in silicon diodes

Abstract

A digital computer program has been employed to study relaxation oscillations of a silicon p-i-n junction diode reverse-biased into avalanche. The computed plots of diode current and voltage versus time and of diode current versus diode voltage are in good agreement with those obtained experimentally by Hoefflinger. The electric field and charge density distributions across the junction are given for selected times during the breakdown and current decay phases of the oscillations. The electric field is characterized by the formation of a saddle during the avalanche buildup. The variations of power output, efficiency, frequency, and average diode voltage are presented as a function of average current for one particular set of diode and circuit parameters.