Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation
- 1 February 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (2), 386-391
- https://doi.org/10.1109/T-ED.1987.22934