Model for dielectric growth on silicon in a nitrous oxide environment
- 29 March 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (13), 1539-1540
- https://doi.org/10.1063/1.108633
Abstract
In this letter, a model for growth kinetics of ultrathin dielectrics obtained by oxidation of silicon in a nitrous oxide environment is proposed. The model assumes that the oxide growth is limited by time-dependent interface reaction, which is slowed down and eventually completely blocked as oxide growth sites are neutralized by nitrogen atoms. The model fits experimental data extremely well, both with time and temperature.Keywords
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