Phonons in ternary group-III nitride alloys
- 1 March 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (9), 6091-6105
- https://doi.org/10.1103/physrevb.61.6091
Abstract
The lattice dynamics of random alloys is studied with a method based on the modified random-element isodisplacement (MREI) and a rigid-ion model. The MREI description is generalized so that no additional force constants are needed but all lattice vibrations can be considered. Phonon frequencies and spectral weights are studied versus composition x for zinc-blende and wurtzite mixed crystals. The one- and two-mode behavior of the zone-center optical phonons is discussed in the light of the interplay of elastic and electric forces as well as of the atomic masses. The results are compared with data from recent Raman and IR measurements.
This publication has 60 references indexed in Scilit:
- Raman phonon modes of zinc blende InxGa1−xN alloy epitaxial layersApplied Physics Letters, 1999
- Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxyJournal of Crystal Growth, 1999
- Structural properties and Raman modes of zinc blende InN epitaxial layersApplied Physics Letters, 1999
- Raman studies on phonon modes in cubic AlGaN alloyApplied Physics Letters, 1999
- Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlNJournal of Crystal Growth, 1998
- Solubility of nitrogen in binary III–V systemsJournal of Crystal Growth, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- Epitaxial growth and optical transitions of cubic GaN filmsPhysical Review B, 1996
- Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxyPhysical Review B, 1995
- Growth of cubic phase gallium nitride by modified molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989