Barrier height modification in silicon Schottky (MIS) solar cells
- 1 April 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (4), 453-457
- https://doi.org/10.1109/t-ed.1977.18757
Abstract
A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V < Voc< 0.56 V. This voltage is independent of the method used in oxide formation when oxide thickness ranges from 10 to 30 Å. It is concluded that slow deposition of the Cr on an oxide interface leads to a lowered metal work function and thus an increased Voc. A high n-value and fixed charge in the oxide are not necessary to obtain a high Voc.Keywords
This publication has 11 references indexed in Scilit:
- Metal-insulator-semiconductor solar cells: Theory and experimental resultsThin Solid Films, 1976
- Open-circuit voltage of MIS silicon solar cellsJournal of Applied Physics, 1976
- MIS-Schottky theory under conditions of optical carrier generation in solar cellsApplied Physics Letters, 1976
- Barrier height enhancement in p-silicon MIS solar cellsIEEE Transactions on Electron Devices, 1976
- Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cellsApplied Physics Letters, 1976
- An Al p-silicon MOS photovoltaic cellJournal of Applied Physics, 1975
- A 15% efficient antireflection-coated metal-oxide-semiconductor solar cellApplied Physics Letters, 1975
- An 8% efficient layered Schottky-barrier solar cellJournal of Applied Physics, 1974
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971