Disordering by Zn-diffusion of InGaAs/InAlAs MQW superlattice structure grown by MBE

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Abstract
Disordering of MBE-grown InGaAs/InAlAs MQW (multiquantum well) superlattice structures by Zn-diffusion was studied for the first time. Optical measurements and sputtering Auger electron measurements revealed that the InGaAs/InAlAs MQW superlattice structure is easily disodered by Zn-diffusion. On the other hand, the MQW superlattice structure is stable against the thermal treatment up to 700°C.