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Breakdown Yield and Lifetime of Thin Gate Oxides in CMOS Processing
Home
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Breakdown Yield and Lifetime of Thin Gate Oxides in CMOS Processing
Breakdown Yield and Lifetime of Thin Gate Oxides in CMOS Processing
IW
I. ‐W. Wu
I. ‐W. Wu
MK
M. Koyanagi
M. Koyanagi
SH
S. Holland
S. Holland
TH
T. Y. Huang
T. Y. Huang
JM
J. C. Mikkelsen
J. C. Mikkelsen
RB
R. H. Bruce
R. H. Bruce
AC
A. Chiang
A. Chiang
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1 June 1989
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 136
(6)
,
1638-1645
https://doi.org/10.1149/1.2096985
Abstract
No abstract available
Cited by 44 articles