High T/sub 0/ 1.3 μm InGaAs strained single quantum well laser with InGaP wide band-gap clad layers

Abstract
1.3 /spl mu/m laser simulation taking hot carriers into account indicated the effectiveness of wide band-gap clad layers for improving laser performance. Lasers fabricated with InGaP cladding layers based on these calculations exhibited the high T/sub 0/ of 100 K.