Temperature dependence of electron concentration in type-converted silicon by 1×1017 cm−2 fluence irradiation of 1 MeV electrons

Abstract

The conduction type of boron (B)-doped silicon (Si) changes from $p$ type into $n$ type by the ${\text{1×10}}^{17} {\mathrm{cm}}^{\mathrm{-2}}$ fluence irradiation (high-fluence irradiation) of 1 MeV electrons. The temperature dependence of the electron concentration $\mathrm{n(T)}$ obtained from Hall-effect measurements is reported. From the analysis of $\mathrm{n(T),}$ the density and energy level of the defects created by the high-fluence irradiation are determined to be ${\text{1.5×10}}^{14} {\mathrm{cm}}^{\mathrm{-3}}$ and $E_C\text{−0.30\hspace{0.05em}}\mathrm{eV},$ respectively, where $E_C$ is the energy level at the bottom of the conduction band. Moreover, the compensated density is ${\text{9.5×10}}^{13} {\mathrm{cm}}^{\mathrm{-3}},$ which is in agreement with the density of B that acts as an acceptor, determined by Fourier-transform infrared spectroscopy.