Liquid phase epitaxial growth and characterization of InAsxSb1−;x AND In1−yGaySb ON (111)B InSb substrates
- 1 March 1981
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (2), 379-421
- https://doi.org/10.1007/bf02654801
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Surface Dislocation Theory of Reconstructed Crystals: VPE GaAsPhysica Status Solidi (a), 1975
- Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]Journal of the Electrochemical Society, 1971
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
- Propriétés des alliages InSb1−xBix II. Absorption OptiquePhysica Status Solidi (b), 1969
- Electrical properties of InAsxSb1−x alloysCanadian Journal of Physics, 1968
- Preparation of InAs-InSb AlloysJournal of the Electrochemical Society, 1964
- Indium antimonide—A review of its preparation, properties and device applicationsSolid-State Electronics, 1962
- Solid Solution in AIIIBVCompoundsProceedings of the Physical Society, 1958
- Solid Solution in the GaSb-InSb SystemProceedings of the Physical Society. Section B, 1956
- Hall Effect and Conductivity of InSbPhysical Review B, 1955