Thermally activated features in1fnoise in silicon on sapphire

Abstract

Reproducible spectral features were found in the low-frequency noise in silicon-on-sapphire (SOS) wafers. These features moved in frequency as a function of temperature, with a range of activation energies from ∼0.4 to ∼0.7 eV. The relation between the log slope of the frequency spectrum and its temperature derivative was qualitatively similar to that predicted by a formula derived by Dutta et al. for noise with a range of activation energies. However, systematic quantitative deviations were found which demonstrate the existence of a wide range of temperatureindependent prefactors in the rate expressions.