Results of ion implantation into silicon in the 100 MeV range. II. Electrical properties
- 16 May 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 71 (1), 121-125
- https://doi.org/10.1002/pssa.2210710114
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Characterization of MOS structures with buried layersPhysica Status Solidi (a), 1978
- Determination of the semiconductor doping profile right up to its surface using the MIS capacitorSolid-State Electronics, 1975